inchange semiconductor product specification silicon pnp power transistors MJ15016 description ? with to-3 package ? complement to type mj15015 ? excellent safe operating area applications ? for high power audio ,stepping motor and other linear applications ? relay or solenoid drviers ? dc-dc converters inverters pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -7 v i c collector current -15 a i b base current -7 a p c collector power dissipation t c =25 ?? 180 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.98 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors MJ15016 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.2a ;i b =0 -120 v v cesat-1 collector-emitter saturation voltage i c =-4a; i b =-0.4a -1.1 v v cesat-2 collector-emitter saturation voltage i c =-10a; i b =-3.3a -3.0 v v cesat-3 collector-emitter saturation voltage i c =-15a; i b =-7.0a -5.0 v v be base-emitter on voltage i c =-4a ; v ce =-4v -1.8 v i ceo collector cut-off current v ce =-60v; v be(off) =0 -0.1 ma i cev collector cut-off current v ce =rated value; v be(off) =1.5v t c =150 ?? -1.0 -6.0 ma i ebo emitter cut-off current v eb =-7v; i c =0 -0.2 ma h fe-1 dc current gain i c =-4a ; v ce =-2v 10 70 h fe-2 dc current gain i c =-4a ; v ce =-4v 20 70 h fe-3 dc current gain i c =-10a ; v ce =-4v 5 i s/b second breakdown collector current with base forward biased v ce =-60vdc,t=0.5 s, nonrepetitive -3.0 a c ob output capacitance i e =0 ; v cb =-10v;f=1.0mhz 60 600 pf f t transition frequency i c =-1a ; v ce =-4v;f=1.0mhz 2.2 mhz
inchange semiconductor product specification 3 silicon pnp power transistors MJ15016 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)
inchange semiconductor product specification 4 silicon pnp power transistors MJ15016
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